Артикул: DMN3032LE-13
id: 2306319
Производитель: DIODES INCORPORATED
Корпус: TO-261-4, TO-261AA
Диапазон рабочих температур: -55..150°C (TJ)
Вид монтажа: Surface Mount
Технология: MOSFET (Metal Oxide)
Упаковка: Cut Tape (CT), Tape & Reel (TR)
Supplier Device Package: SOT-223
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
FET Type: N-Channel
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 498пФ @ 15V
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5В, 10V
