Артикул: IAUT150N10S5N035ATMA1
id: 2307840
Производитель: Infineon Technologies
Серия: OptiMOS™-5
Корпус: 8-PowerSFN
Диапазон рабочих температур: -55..175°C (TJ)
Вид монтажа: Surface Mount
Технология: MOSFET (Metal Oxide)
Упаковка: Cut Tape (CT)
Supplier Device Package: PG-HSOF-8-1
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6110пФ @ 50V
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6В, 10V
