Артикул: EPC2012C
id: 2282233
Производитель: EPC
Серия: eGaN®
Корпус: Die
Диапазон рабочих температур: -40..150°C (TJ)
Вид монтажа: Surface Mount
Технология: GaNFET (Gallium Nitride)
Упаковка: Tape & Reel (TR)
Supplier Device Package: Die Outline (4-Solder Bar)
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Vgs (Max): +6В, -4V
Drain to Source Voltage (Vdss): 200V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 140пФ @ 100V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
